Design of eFuse OTP IP for Light Sensors Using Single Devices

Authors

    Echikh Souad, Hongzhou Jin, DoHoon Kim, SoonWoo Kwon, PanBong Ha, YoungHee Kim Department of Electronics Engineering, Changwoon National University, Gyeongsangnam-do, Republic of Korea Department of Electronics Engineering, Changwoon National University, Gyeongsangnam-do, Republic of Korea Department of Electronics Engineering, Changwoon National University, Gyeongsangnam-do, Republic of Korea Department of Electronics Engineering, Changwoon National University, Gyeongsangnam-do, Republic of Korea Department of Electronics Engineering, Changwoon National University, Gyeongsangnam-do, Republic of Korea Department of Electronics Engineering, Changwoon National University, Gyeongsangnam-do, Republic of Korea

Keywords:

Single device, Light sensor, Electrical fuse (eFuse), One-time programmable (OTP), Program voltage

Abstract

A light sensor chip requires a small capacity electrical fuse (eFuse) onetime programmable (OTP) memory intellectual property (IP) to trim analog circuits or set initial values of digital registers. In this paper, a 128-bit eFuse OTP IP was designed using only 3.3V medium voltage (MV) devices, without the use of 1.8V low-voltage (LV) logic devices. The eFuse OTP IP, designed with 3.3V single MOS devices, can reduce the total process cost of three masks, which include the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. Additionally, since the 1.8V voltage regulator circuit was not required, the size of the light sensor chip can be reduced. To further reduce the number of package pins on the light sensor chip, the VPGM voltage (program voltage) was applied through the VPGM pad during the wafer testing, and the VDD voltage was applied through the PMOS power switching circuit after packaging resulting in a reduced number of package pins.

References

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Published

2023-12-31